RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz APPLICATION For output stage of high power amplifiers in HF band mobile radio sets. RoHS COMPLIANT RD06HHF1-101 is a RoHS compliant products. WebJan 13, 2015 · MITSUBISHI RF POWER MOS FET RD06HHF1 Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers …
Silicon RF Devices RF High Power MOS FETs (Discrete) …
WebJan 28, 2013 · The Mitsubishi RD06HHF1 is a medium power LDMOS (6 W) for the HF bands, which is often used as a driver for a couple of its bigger brother RD16HHF1 or also standalone for a QRP-level output power. WebRD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz … iowa crisis chat
RD06HHF1-101 RD06HHF1-101 RD06HHF1-101 Stock OMO …
Web< Silicon RF Power MOS FET (Discrete) > RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W Publication Date : Jun．2024 5 TEST CIRCUIT(f=30MHz) WebThe RD06HHF1 parts manufactured by MITSUBISHI are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the … WebRD06HHF1Mitsubishi Transistor, RF Power Amplifier for CB radio (NEW President e.g. Harry/Johnny III, Tommy III, Truman ASC, Cobra GTL), MOSFET silicon, Original RD06HHF1-501, RoHS Compliance, 6 watt, 30 MHz, 12.5v shop, price, burn symptoms, problems, troubleshooting, replacement, equivalent. Designed for HF RF power amplifiers … iowa crt bill